Hey Guys,
I went through the Schematic for the C1 BMS and there are three MOSFET options suggested for the high side switching
MOSFET alternatives (100V):
- Infineon IPT020N10N3: 2 mOhm typ
- Diodes DMTH10H1M7STLWQ: 1.4 mOhm typ
- HUAYI HYG015N10NS1TA: 1.2 mOhm typ
The Gate-Source resistor used in the design is 47 Ohms
Was this value tested for all 3 FETs (or) do i have to test on my own to decide a good value for the Gate-Source resistor ?
P.S : I’m trying to build a test board with the HUAYI HYG015N10NS1TA
I’m new to electronics and new to the forum. The C1 BMS has been very helpful in learning the inner workings of a BMS. The interactive HTML BOM is my absolute favourite
Thanks & Regards,
Muki